The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm. Some of the challenges are materials related, such as transistors with high-k dielectrics and on-chip interconnects made from copper and low-k dielectrics. The magnitude of these challenges demands special attention from those in the metrology and analytical measurements community. Characterization and metrology are key enablers for developing semiconductor process ...
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The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm. Some of the challenges are materials related, such as transistors with high-k dielectrics and on-chip interconnects made from copper and low-k dielectrics. The magnitude of these challenges demands special attention from those in the metrology and analytical measurements community. Characterization and metrology are key enablers for developing semiconductor process technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of the process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics.
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Add this copy of Characterization and Metrology for Ulsi Technology 2000 to cart. $348.17, fair condition, Sold by Goodwill of Silicon Valley rated 5.0 out of 5 stars, ships from San Jose, CA, UNITED STATES, published 2001 by American Institute of Physics.
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Fair. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Acceptable condition! Any other included accessories are also in Acceptable condition showing use. Use can include some highlighting and writing page and cover creases as well as other types visible wear such as cover tears discoloration staining marks scuffs etc. All pages intact.
