At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and ...
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At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.
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Add this copy of Characterization of Wide Bandgap Power Semiconductor to cart. $114.30, like new condition, Sold by Redux Books rated 5.0 out of 5 stars, ships from Wyoming, MI, UNITED STATES, published 2018 by The Institution of Engineering and Technology.
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Institution of Engineering and Technology
Published:
10/2018
Language:
English
Alibris ID:
17698081860
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Institution of Engineering and Technology
Published:
2018
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English
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17373570329
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Institution of Engineering and Technology
Published:
2018
Language:
English
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17445754091
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New. 347 p. Energy Engineering . Intended for college/higher education audience. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Characterization of Wide Bandgap Power Semiconductor to cart. $174.55, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2018 by Institution of Engineering and Technology.
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Institution of Engineering and Technology
Published:
2018
Language:
English
Alibris ID:
17372959305
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Fine. 347 p. Energy Engineering . Intended for college/higher education audience. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
