Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate ...
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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
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Add this copy of High Dielectric Constant Materials: VLSI MOSFET to cart. $272.12, new condition, Sold by Ria Christie Books rated 4.0 out of 5 stars, ships from Uxbridge, MIDDLESEX, UNITED KINGDOM, published 2010 by Springer-Verlag Berlin and Heidelberg GmbH & Co. K.
Edition:
2010, Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Add this copy of High Dielectric Constant Materials: VLSI MOSFET to cart. $318.99, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2010 by Springer-Verlag Berlin and Heidelberg GmbH & Co. K.
Edition:
2010, Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Add this copy of High Dielectric Constant Materials: VLSI Mosfet to cart. $318.99, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2004 by Springer.
