Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300???C, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This ...
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Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300???C, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
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Add this copy of Silicon Carbide 2004 Materials, Processing and Devices: to cart. $22.12, good condition, Sold by Books On The Run rated 4.0 out of 5 stars, ships from Ocala, FL, UNITED STATES, published 2004 by Materials Research Society.
Add this copy of Silicon Carbide 2004: Materials, Processing and Devices to cart. $37.47, like new condition, Sold by Prior Books rated 5.0 out of 5 stars, ships from Cheltenham, GLOUCESTERSHIRE, UNITED KINGDOM, published 2004 by Cambridge University Press.
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Like New. Size: 6x0x9; A firm and square hardback with sharp corners and strong joints, just showing a few very minor cosmetic rubs. Hence a non-text page has a small 'damaged' stamp. Despite such this book is actually in nearly new condition and looks and feels unread. Thus the contents are crisp, fresh and tight. Also, no pen-marks and not from a library so no such stamps or labels. Now offered for sale at a special price for a speedy sale.
Add this copy of Silicon Carbide 2004? Materials, Processing and Devices to cart. $72.96, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Santa Clarita, CA, UNITED STATES, published 2004 by Cambridge University Press.
Add this copy of Silicon Carbide 2004-Materials, Processing and Devices to cart. $152.50, good condition, Sold by True Oak Books rated 5.0 out of 5 stars, ships from Highland, NY, UNITED STATES, published 2004 by Materials Research Society.
Edition:
1st Edition (Unstated); No Printing Stated
Publisher:
Materials Research Society
Published:
2004
Language:
English
Alibris ID:
18414364136
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Seller's Description:
Good+ with no dust jacket. MRS Proceedings; 6 X 6 X 9 inches; 322 pages; B&W illustrations. Graphs. Ex-Library copy with usual identifiers. Very Good condition otherwise. No other noteworthy defects. No markings on text pages.; -Your satisfaction is our priority. We offer free returns and respond promptly to all inquiries. Your item will be carefully cushioned in bubble wrap and securely boxed. All orders ship on the same or next business day. Buy with confidence.
