A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices ...
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A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types
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Add this copy of Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets to cart. $200.08, like new condition, Sold by GreatBookPricesUK5 rated 5.0 out of 5 stars, ships from Castle Donington, DERBYSHIRE, UNITED KINGDOM, published 1999 by Wiley-Interscience.
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Fine. Sewn binding. Cloth over boards. 520 p. Contains: Unspecified. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets to cart. $82.28, fair condition, Sold by BooksRun rated 5.0 out of 5 stars, ships from Philadelphia, PA, UNITED STATES, published 1999 by Wiley-Interscience.
Add this copy of Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets to cart. $128.25, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Santa Clarita, CA, UNITED STATES, published 1999 by Wiley-Interscience.
Add this copy of Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets to cart. $212.54, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 1999 by Wiley-Interscience.
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Seller's Description:
Fine. Sewn binding. Cloth over boards. 520 p. Contains: Unspecified. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
